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| SMD Type NPN Silicon Epitaxial Transistor 2SC3075 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Excellent Switching Times +0.2 9.70 -0.2 tr=1.0is (Max.) tf=1.5is (Max.) at IC=0.5A High colletor Breakdown Voltage: VCEO=400V +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base Current Total Power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC Icp IB PC Rating 500 400 7 0.8 1.5 0.5 1 10 150 -55 to +150 Unit V V V A A A W W Electrical Characteristics Ta = 25 Parameter collector cutoff current emitter cutoff current Emitter-Base Breakdown Voltage Collector-Emitter Breakdown Voltage DC current Gain Collector-Emitter Saturation Voltage Base- Emitter Voltage Switching time turn-0n time Symbol ICBO IEBO V(BR)EBO V(BR)CEO hFE VCE(sat) VBE(sat) tr Testconditons VCB=400V,IE=0 VEB=7V,IC=0 IE=1mA,IC=0 IC=10mA,IB=0 VCE=5V,IC=0.1A VCE=5V,IC=0.5A IC=0.1A,IB=0.01A IC=0.1A,IB=0.01A 500 400 20 10 0.5 1 1 V V is 100 Min Typ Max 100 100 Unit iA iA V V Switching storage time tstg 2.5 3.80 is tf Switching fall time 1.5 is www.kexin.com.cn 1 |
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